AL N-SI DIODES WITH LOW-ENERGY (SIMILAR-TO-100 EV) HYDROGEN-ION IMPLANTATION PRIOR TO METALLIZATION/

Authors
SRIVASTAVA PC COLLUZA C CHANDRA S SINGH UP
Citation
Pc. Srivastava et al., AL N-SI DIODES WITH LOW-ENERGY (SIMILAR-TO-100 EV) HYDROGEN-ION IMPLANTATION PRIOR TO METALLIZATION/, Solid-state electronics, 37(3), 1994, pp. 520-522
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
3
Year of publication
1994
Pages
520 - 522
Database
ISI
SICI code
0038-1101(1994)37:3<520:ANDWL(>2.0.ZU;2-7