CHARACTERIZATION OF W FILMS ON SI AND SIO2 SI SUBSTRATES BY X-RAY-DIFFRACTION, AFM AND BLISTER TEST ADHESION MEASUREMENTS/

Citation
A. Bosseboeuf et al., CHARACTERIZATION OF W FILMS ON SI AND SIO2 SI SUBSTRATES BY X-RAY-DIFFRACTION, AFM AND BLISTER TEST ADHESION MEASUREMENTS/, Microscopy microanalysis microstructures, 8(4-5), 1997, pp. 261-272
Citations number
21
ISSN journal
11542799
Volume
8
Issue
4-5
Year of publication
1997
Pages
261 - 272
Database
ISI
SICI code
1154-2799(1997)8:4-5<261:COWFOS>2.0.ZU;2-5
Abstract
Contrary to most classical adhesion test, the blister test provides qu antitative adhesion energy measurements. We demonstrate its applicatio n to 1 mu m thick W films in tensile stress state deposited by xenon D C magnetron sputtering on PECVn/Si(100) substrates. The W films surfac e morphology; structure and residual stress were also characterized by atomic force microscopy, X-ray diffraction and substrate curvature me asurements as function of the deposition pressure. Films characteristi cs are compared with those of W films deposited directly on Si(100) su bstrates.