MEASUREMENTS AND CALCULATIONS OF THE VALENCE-BAND OFFSETS OF SIOX ZNS(111) AND SIOX/CDTE(111) HETEROJUNCTIONS/

Authors
BAN DY XUE JG FANG RC XU SH LU ED XU PS
Citation
Dy. Ban et al., MEASUREMENTS AND CALCULATIONS OF THE VALENCE-BAND OFFSETS OF SIOX ZNS(111) AND SIOX/CDTE(111) HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 989-995
Citations number
43
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
989 - 995
Database
ISI
SICI code
1071-1023(1998)16:3<989:MACOTV>2.0.ZU;2-2
Abstract
SiOx(x>1.5) overlayers have been in situ grown on ZnS (111) and CdTe ( 111) substrates. Synchrotron radiation photoemission spectroscopy has been used to measure the electronic structures and band lineups of the se two heterojunctions. The valence band offsets of SiOx/ZnS(111) and SiOx/CdTe(111) derived from the measurements are 2.8+/-0.2 and 4.7+/-0 .2 eV, respectively. Harrison's ''tight binding'' theory is extended i nto the theoretical estimation of the band lineups of SiO2 related het erojunctions. The agreement between the experimental and theoretical r esults is good. Our result also explains the positive role of SiO2 lay ers in ZnS-based thin film electroluminescence devices. (C) 1998 Ameri can Vacuum Society.