Dy. Ban et al., MEASUREMENTS AND CALCULATIONS OF THE VALENCE-BAND OFFSETS OF SIOX ZNS(111) AND SIOX/CDTE(111) HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 989-995
SiOx(x>1.5) overlayers have been in situ grown on ZnS (111) and CdTe (
111) substrates. Synchrotron radiation photoemission spectroscopy has
been used to measure the electronic structures and band lineups of the
se two heterojunctions. The valence band offsets of SiOx/ZnS(111) and
SiOx/CdTe(111) derived from the measurements are 2.8+/-0.2 and 4.7+/-0
.2 eV, respectively. Harrison's ''tight binding'' theory is extended i
nto the theoretical estimation of the band lineups of SiO2 related het
erojunctions. The agreement between the experimental and theoretical r
esults is good. Our result also explains the positive role of SiO2 lay
ers in ZnS-based thin film electroluminescence devices. (C) 1998 Ameri
can Vacuum Society.