REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION SILICON OXYNITRIDE THIN-FILMS- DIELECTRIC-PROPERTIES

Silicon oxynitride thin films have been deposited using remote plasma chemical vapor deposition from SiCl4 + NH3 + O-2 gas mixtures. The sto ichiometry of the deposited films varies from that corresponding to th e silicon oxide to a stoichiometry very close to silicon nitride when the NH3/O-2 gas ratio is changed in the plasma. The approximate compos itions of the films were determined by Rutherford backscattering spect roscopy and nuclear reaction analysis, and the local bonding arrangeme nts were determined by infrared spectroscopy. Analysis of metal-insula te;semiconductor devices under the effect of and external sinusoidal e lectric field (dielectric spectrometry) indicates the presence of trap s centers in the Si-SiO2 interface. Correlations between the local bon ded structures in the oxynitride and the conduction and polarization p rocesses detected in the films are also discussed. (C) 1998 American V acuum Society.