ELECTRON FIELD-EMISSION FROM DIAMOND GROWN BY A MULTIPLE PULSED-LASERPROCESS

Citation
A. Badzian et al., ELECTRON FIELD-EMISSION FROM DIAMOND GROWN BY A MULTIPLE PULSED-LASERPROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1184-1187
Citations number
17
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1184 - 1187
Database
ISI
SICI code
1071-1023(1998)16:3<1184:EFFDGB>2.0.ZU;2-G
Abstract
Among wide-band-gap materials, diamond has been tested extensively in many laboratories for its applicability as an electron emission materi al. The results are encouraging but also point out the necessity of mo difying the diamond films with respect to their chemical composition a nd/or atomic structure. This article reports on electron emission meas urements conducted on diamond coatings deposited on WC/Co alloy by a m ultiple pulsed laser process. The electron emission has been measured in a diode configuration with a diamond surface-anode spacing of 20 an d 50 mu m in vacuum at P = 10(-7) Torr. Current densities of 6 mA/cm(2 ) have been calculated at an applied voltage of 3000 V (for 20 mu m). We propose an explanation for electron emission. (C) 1998 American Vac uum Society.