FABRICATION OF DIAMOND-LIKE CARBON-COATED FIELD EMITTER TRIODE USING ALUMINUM PARTING LAYER

Citation
S. Lee et al., FABRICATION OF DIAMOND-LIKE CARBON-COATED FIELD EMITTER TRIODE USING ALUMINUM PARTING LAYER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1203-1206
Citations number
10
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1203 - 1206
Database
ISI
SICI code
1071-1023(1998)16:3<1203:FODCFE>2.0.ZU;2-9
Abstract
Coating silicon field emitter tips with a thin film of diamondlike car bon (DLC) seems to be a promising way to improve the performance of th e silicon emitter tips. If one deposits a DLC film directly onto the g ated silicon emitter, DLC will contaminate the side wall of the insula ting layer, which can cause a large leakage current to the gate. To pr event the contamination of the side wall, we deposited an aluminum sac rificial layer before coating the DLC film. The gate current measured from the DLC-coated emitters using the sacrificial layer was less than 3% of the anode current. (C) 1998 American Vacuum Society.