GROWTH AND LUMINESCENT CHARACTERISTICS OF ZNGA2O4 THIN-FILM PHOSPHOR PREPARED BY RADIO-FREQUENCY MAGNETRON SPUTTERING

ZnGa2O4 and doped ZnGa2O4 thin film phosphors were prepared by the rf magnetron sputtering method. Deposition parameters were controlled to characterize the deposition mechanism and structural changes. And then the relation between the structure and luminous properties was charac terized. To observe the effects of the substrates, thin films were dep osited on Si(100), Si(111), and indium-tin-oxide (ITO) coated glass su bstrates. The orientational transition was observed by varying the sub strate temperature. The grain size of ZnGa2O4:Mn thin film deposited o n a Si wafer was smaller than that on an ITO/glass substrate, which re sulted in higher photoluminescence (PL) intensity. By heat treatment, PL intensity was increased because it eliminated the defects in films and improved the crystallinity. (C) 1998 American Vacuum Society.