MOLECULAR-BEAM EPITAXY-GROWN INGAN MULTIPLE-QUANTUM-WELL STRUCTURES OPTIMIZED USING IN-SITU CATHODOLUMINESCENCE

Authors
VANHOVE JM CHOW PP WOWCHAK AM KLAASSEN JJ HICKMAN R POLLEY C
Citation
Jm. Vanhove et al., MOLECULAR-BEAM EPITAXY-GROWN INGAN MULTIPLE-QUANTUM-WELL STRUCTURES OPTIMIZED USING IN-SITU CATHODOLUMINESCENCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1286-1288
Citations number
7
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1286 - 1288
Database
ISI
SICI code
1071-1023(1998)16:3<1286:MEIMSO>2.0.ZU;2-1
Abstract
In this work, in situ cathodoluminescence (CL) is presented as a techn ique to optimize the molecular beam epitaxy (MBE) growth conditions fo r InGaN films and structures. InGaN was grown at 1 mu m/h using a reac tive nitrogen rf plasma source at substrate temperatures ranging from 550 to 650 degrees C. The quick determination of the emission waveleng th and quality from the peak position and width allowed various growth conditions and structures to be tried without removal of the sample f rom the MBE system. CL scans are presented from samples grown under va rying Ga/In flux ratios, III/nitrogen flux ratios, and substrate tempe ratures showing the usefulness of in situ monitoring for MBE InGaN gro wth. (C) 1998 American Vacuum Society.