MICROSTRUCTURE AND COMPOSITION OF INASN ALLOYS GROWN BY PLASMA-SOURCEMOLECULAR-BEAM EPITAXY

Authors
BERESFORD R STEVENS KS SCHWARTZMAN AF
Citation
R. Beresford et al., MICROSTRUCTURE AND COMPOSITION OF INASN ALLOYS GROWN BY PLASMA-SOURCEMOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1293-1296
Citations number
6
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1293 - 1296
Database
ISI
SICI code
1071-1023(1998)16:3<1293:MACOIA>2.0.ZU;2-S
Abstract
A series of growths conducted at different substrate temperatures and V:III ratios is analyzed by x-ray diffraction to determine composition . A metastable InAsN alloy plus pure InAs are obtained for temperature s in the range 450-500 degrees C and total V:III ratio of approximatel y unity. The InAs fraction in the alloy phase increases at lower tempe ratures, the maximum observed is 13%. For higher temperatures or highe r V:III ratio only separated phases of InAs and InN are found. (C) 199 8 American Vacuum Society.