R. Beresford et al., MICROSTRUCTURE AND COMPOSITION OF INASN ALLOYS GROWN BY PLASMA-SOURCEMOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1293-1296
A series of growths conducted at different substrate temperatures and
V:III ratios is analyzed by x-ray diffraction to determine composition
. A metastable InAsN alloy plus pure InAs are obtained for temperature
s in the range 450-500 degrees C and total V:III ratio of approximatel
y unity. The InAs fraction in the alloy phase increases at lower tempe
ratures, the maximum observed is 13%. For higher temperatures or highe
r V:III ratio only separated phases of InAs and InN are found. (C) 199
8 American Vacuum Society.