MOLECULAR-BEAM EPITAXY GROWTH OF SIC ON SI(111) FROM SILACYCLOBUTANE

3C-SiC films have been grown by molecular beam epitaxy on Si(lll) subs trates using a single organosilane precursor (silacyclobutane-SiC3H8) Temperatures of 800 to 1100 degrees C and pressures of (1-5)x10(-6) To rr were utilized. The growth rate of the SiC films obtained from secon dary ion mass spectrometry depth profiles ranged from 1 to 6 Angstrom/ min. The SiC chemical bonding.structure was confirmed by Fourier trans form infrared spectrometry. The surface morphology and crystallinity o f SiC films were studied by scanning electron microscopy (SEM), reflec tion high energy electron diffraction and x-ray diffraction. Typical t riangular growth pits of various sizes were observed by SEM. X-ray dif fraction reveals that SIC films grown in the presence of native oxide exhibit better crystallinity than those grown on surfaces from which t he oxide is removed prior to growth. (C) 1998 American Vacuum Society.