J. Chen et al., MOLECULAR-BEAM EPITAXY GROWTH OF SIC ON SI(111) FROM SILACYCLOBUTANE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1305-1308
3C-SiC films have been grown by molecular beam epitaxy on Si(lll) subs
trates using a single organosilane precursor (silacyclobutane-SiC3H8)
Temperatures of 800 to 1100 degrees C and pressures of (1-5)x10(-6) To
rr were utilized. The growth rate of the SiC films obtained from secon
dary ion mass spectrometry depth profiles ranged from 1 to 6 Angstrom/
min. The SiC chemical bonding.structure was confirmed by Fourier trans
form infrared spectrometry. The surface morphology and crystallinity o
f SiC films were studied by scanning electron microscopy (SEM), reflec
tion high energy electron diffraction and x-ray diffraction. Typical t
riangular growth pits of various sizes were observed by SEM. X-ray dif
fraction reveals that SIC films grown in the presence of native oxide
exhibit better crystallinity than those grown on surfaces from which t
he oxide is removed prior to growth. (C) 1998 American Vacuum Society.