M. Kobayashi et al., MOLECULAR-BEAM EPITAXY OF CDS SELF-ASSEMBLED QUANTUM DOTS ON ZNSE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1316-1320
CdS quantum dot (QD) structures were grown by molecular beam epitaxy o
n (001) ZnSe. Circular QDs were observed from the sample, grown at 220
degrees C, whereas rectangular QDs were observed from the sample grow
n at 280 degrees C. The difference of the dot shape may be related to
the metastable nature of CdS since CdS thin films grown at 220 degrees
C show zincblende structures and thin films grown at 280 degrees C sh
ow wurtzite structures. The PL peak position and linewidth were strong
ly affected by the growth condition of QDs; QD samples with a thicker
CdS deposition showed redshifts of the peak position along with the na
rrowing of the linewidth. (C) 1998 American Vacuum Society.