MOLECULAR-BEAM EPITAXY OF CDS SELF-ASSEMBLED QUANTUM DOTS ON ZNSE

Citation
M. Kobayashi et al., MOLECULAR-BEAM EPITAXY OF CDS SELF-ASSEMBLED QUANTUM DOTS ON ZNSE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1316-1320
Citations number
11
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1316 - 1320
Database
ISI
SICI code
1071-1023(1998)16:3<1316:MEOCSQ>2.0.ZU;2-2
Abstract
CdS quantum dot (QD) structures were grown by molecular beam epitaxy o n (001) ZnSe. Circular QDs were observed from the sample, grown at 220 degrees C, whereas rectangular QDs were observed from the sample grow n at 280 degrees C. The difference of the dot shape may be related to the metastable nature of CdS since CdS thin films grown at 220 degrees C show zincblende structures and thin films grown at 280 degrees C sh ow wurtzite structures. The PL peak position and linewidth were strong ly affected by the growth condition of QDs; QD samples with a thicker CdS deposition showed redshifts of the peak position along with the na rrowing of the linewidth. (C) 1998 American Vacuum Society.