Kj. Goldammer et al., ELECTRICAL-PROPERTIES OF INSB QUANTUM-WELLS REMOTELY DOPED WITH SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1367-1371
Two-dimensional electron systems were realized in InSb quantum wells w
ith AlxIn1-xSb barrier layers delta-doped with Si. Measured electron m
obilities in multiple-quantum-well structures were as high as 41000 cm
(2)/V s at room temperature and 209000 cm(2)/V s at 77 K. Simple model
s can be used to explain the observed dependencies of the electron den
sity on the quantum-well-to-dopant distance and on the, number of quan
tum wells. Characterization by atomic force microscopy indicates that
layer morphology may be a factor limiting electron mobility. (C) 1998
American Vacuum Society.