ELECTRICAL-PROPERTIES OF INSB QUANTUM-WELLS REMOTELY DOPED WITH SI

Citation
Kj. Goldammer et al., ELECTRICAL-PROPERTIES OF INSB QUANTUM-WELLS REMOTELY DOPED WITH SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1367-1371
Citations number
13
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1367 - 1371
Database
ISI
SICI code
1071-1023(1998)16:3<1367:EOIQRD>2.0.ZU;2-5
Abstract
Two-dimensional electron systems were realized in InSb quantum wells w ith AlxIn1-xSb barrier layers delta-doped with Si. Measured electron m obilities in multiple-quantum-well structures were as high as 41000 cm (2)/V s at room temperature and 209000 cm(2)/V s at 77 K. Simple model s can be used to explain the observed dependencies of the electron den sity on the quantum-well-to-dopant distance and on the, number of quan tum wells. Characterization by atomic force microscopy indicates that layer morphology may be a factor limiting electron mobility. (C) 1998 American Vacuum Society.