ELECTRICAL-PROPERTIES OF INSB QUANTUM-WELLS REMOTELY DOPED WITH SI

Two-dimensional electron systems were realized in InSb quantum wells w ith AlxIn1-xSb barrier layers delta-doped with Si. Measured electron m obilities in multiple-quantum-well structures were as high as 41000 cm (2)/V s at room temperature and 209000 cm(2)/V s at 77 K. Simple model s can be used to explain the observed dependencies of the electron den sity on the quantum-well-to-dopant distance and on the, number of quan tum wells. Characterization by atomic force microscopy indicates that layer morphology may be a factor limiting electron mobility. (C) 1998 American Vacuum Society.