STRUCTURAL AND OPTICAL-PROPERTIES OF 1.3 MU-M WAVELENGTH INASP INP/INGAP STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL MODULATORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

Authors
KUO HC THOMAS S HORTON TU MOSER BG STILLMAN GE LIN CH CHEN H
Citation
Hc. Kuo et al., STRUCTURAL AND OPTICAL-PROPERTIES OF 1.3 MU-M WAVELENGTH INASP INP/INGAP STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL MODULATORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1377-1380
Citations number
10
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1377 - 1380
Database
ISI
SICI code
1071-1023(1998)16:3<1377:SAOO1M>2.0.ZU;2-T
Abstract
We present in this article a comparison of 1.3 mu m InAs0.45P0.55/In0. 81Ga0.19P strain-compensated multiple quantum well (SC-MQW) modulators with and without an InP insertion layer. Material quality was evaluat ed by cross-sectional transmission electron microscope analysis, x-ray rocking curves with dynamical simulations, and photoluminescence meas urements. Devices were fabricated and device performance criteria such as contrast ratio (C.R.) and uniformity were also compared. It was fo und that higher C.R. and highly uniform InAsP/InGaP SC-MQW modulators can be achieved by inserting thin InP layers at the heterointerfaces b etween InAsP and InGaP. (C) 1998 American Vacuum Society.