STRUCTURAL-PROPERTIES OF GA2O3(GD2O3)-GAAS INTERFACES

Authors
HONG M MARCUS MA KWO J MANNAERTS JP SERGENT AM CHOU LJ HSIEH KC CHENG KY
Citation
M. Hong et al., STRUCTURAL-PROPERTIES OF GA2O3(GD2O3)-GAAS INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1395-1397
Citations number
11
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1395 - 1397
Database
ISI
SICI code
1071-1023(1998)16:3<1395:SOGI>2.0.ZU;2-2
Abstract
Ga2O3(Gd2O3)-GaAs heterostructures in situ fabricated using a multicha mber ultrahigh vacuum (molecular beam epitaxy) system were studied by x-ray reflectivity measurement and high-resolution transmission electr on microscopy. The oxide-GaAs interfaces were found to be very smooth with the roughness no more than 1 nm. Moreover, an interfacial roughne ss as small as one atomic layer of GaAs (0.33 nm) was observed using x -ray reflectivity. (C) 1998 American Vacuum Society.