ALGAAS GAAS NPN HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON SI(311) BY MOLECULAR-BEAM EPITAXY/

AlGaAs/GaAs Npn heterojunction bipolar transistors have been grown by molecular beam epitaxy on Si (311) substrates utilizing a GaAs buffer layer as thin as 2 mu m and fabricated using a self-aligned base conta ct process. Reflection high-energy electron diffraction patterns corre spond with antiphase domain-free growth. Direct current measurements f or a 70 x 70 mu m(2) device reveal a small-signal common-emitter curre nt gain of 10 and collector-emitter breakdown of 13 V at a collector c urrent of 1.8 kA/cm(2). These results indicate that further optimizati on in growth technique may render the growth of GaAs-on-Si (311) a via ble candidate for application in high-power integration. (C) 1998 Amer ican Vacuum Society.