RESONANT-CAVITY-ENHANCED AVALANCHE PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY ON INP FOR DETECTION NEAR 1.55 MU-M

Authors
ANSELM KA NIE H LENOX C HANSING C CAMPBELL JC STREETMAN BG
Citation
Ka. Anselm et al., RESONANT-CAVITY-ENHANCED AVALANCHE PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY ON INP FOR DETECTION NEAR 1.55 MU-M, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1426-1429
Citations number
13
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1426 - 1429
Database
ISI
SICI code
1071-1023(1998)16:3<1426:RAPGBM>2.0.ZU;2-L
Abstract
We report on the epitaxial growth, fabrication, and characterization o f a resonant-cavity-enhanced separate-absorption and multiplication av alanche photodiode capable of detecting light at 1.55 mu m. The device is grown by molecular beam epitaxy with In0.53GaxAl0.47-xAs layers la ttice matched to InP. This detector has exhibited a peak external quan tum efficiency greater than 70%, a gain of 8, and a dark current of on ly 50 nA at 90% of breakdown for a 100-mu m-diam diode. (C) 1998 Ameri can Vacuum Society.