SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY

Authors
SERYOGIN GA NIKISHIN SA TEMKIN H SCHLAF R SHARP LI WEN YC PARKINSON B ELYUKHIN VA KUDRIAVTSEV YA MINTAIROV AM FALEEV NN BAIDAKOVA MV
Citation
Ga. Seryogin et al., SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1456-1458
Citations number
11
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1456 - 1458
Database
ISI
SICI code
1071-1023(1998)16:3<1456:SZGBME>2.0.ZU;2-A
Abstract
Epitaxial layers of ZnSnAs2 were grown by molecular beam epitaxy on Si and InP substrates. Growth conditions were investigated by varying th e substrate temperature and the Sn, As, and Zn fluxes. The best morpho logy and stoichiometry was obtained at T-s = 300-320 degrees C and the Aux ratio of P-As4/P(Zn )similar to 1.5-4. The samples were evaluated by secondary neutral mass spectroscopy, high resolution x-ray diffrac tion, Raman spectroscopy, and atomic force microscopy. Single phase la yers of ZnSnAs2 grown on InP(001) substrates show lattice mismatch of -3.4 x 10(-4). (C) 1998 American Vacuum Society.