MOLECULAR-BEAM EPITAXIAL-GROWTH OF BI2SE3-DOPED AND TL2SE-DOPED PBSE AND PBEUSE ON CAF2 SI(111)/

Authors
FANG XM CHAO IN STRECKER BN MCCANN PJ YUAN S LIU WK SANTOS MB
Citation
Xm. Fang et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF BI2SE3-DOPED AND TL2SE-DOPED PBSE AND PBEUSE ON CAF2 SI(111)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1459-1462
Citations number
13
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1459 - 1462
Database
ISI
SICI code
1071-1023(1998)16:3<1459:MEOBAT>2.0.ZU;2-Z
Abstract
We report results on the incorporation of Bi (n type) and Tl (p-type) impurity in PbSe and PbEuSe grown on CaF2/Si(111) by molecular beam ep itaxy. Bi2Se3, and Tl2Se were used as sources of dopants in the growth . Electron concentrations in the low 10(19) cm(-3) range and hole conc entrations in the middle 10(18) cm(-3) range have been realized in the PbSe and PbEuSe layers with Eu content up to 3%. Electron and hole mo bilities are comparable to those for PbSe and PbEuSe grown on BaF2. (C ) 1998 American Vacuum Society.