EU-CAF2 LAYERS ON P-SI(100) GROWN USING MOLECULAR-BEAM EPITAXY AS MATERIALS FOR SI-BASED OPTOELECTRONICS

Eu:CaF2 layers have been grown epitaxially on Si using molecular beam epitaxy (MBE) with the intent of realizing an electrically pumped opti cal source on Si. Here we present an atomic force microscopy study of the morphological features of MBE-grown Eu:CaF2, on p-type Si(100) sub strates and a study of electroluminescence (EL) from EL devices;fabric ated.from these layers. The surface morphologies of the MBE-grown laye rs show an increased density of faceted features with increase in epil ayer Eu content. X-ray photoelectron spectroscopy (XPS) data reveal th e emergence of satellite peaks around the regular Eu XPS peaks in Eu:C aF2 layer with high Eu content. The characteristics of EL devices fabr icated on these layers is presented and a possible EL mechanism is dis cussed. (C) 1998 American Vacuum Society.