IN-SITU RELAXED SI1-XGEX EPITAXIAL LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON COMPLIANT SI-ON-INSULATOR SUBSTRATES

Citation
Z. Yang et al., IN-SITU RELAXED SI1-XGEX EPITAXIAL LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON COMPLIANT SI-ON-INSULATOR SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1489-1491
Citations number
17
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1489 - 1491
Database
ISI
SICI code
1071-1023(1998)16:3<1489:IRSELW>2.0.ZU;2-W
Abstract
High quality relaxed Si0.6Ge0.4 films as thick as 1.0 mu m have been a chieved as grown on silicon-on-insulator (SOI) substrates with 200 Ang strom Si(100)-oriented compliant substrates. This represents the thick est relaxed layers grown by this technique. A greater than five order of magnitude reduction in threading dislocation density was achieved b y compliant growth compared to growth on unmodified Si(100) substrates . Additionally, for the first time (to the best of our knowledge) we s how that it is not necessary to separate the growth and relaxation pro cesses, and relaxation during growth is governed by the nature of the compliant substrate structure that causes dislocations to terminate at the unique crystalline-amorphous SiO2 interface. Results indicate tha t utilizing SOI as a compliant substrate which is effective in produci ng high quality Si1-xGex films can be extended to other films, where f ilm relaxation (via dislocation nucleation and growth) cannot be conve niently separated,from the synthesis method (e.g., SiC). (C) 1998 Amer ican Vacuum Society.