HIGH-SPEED SI SIGE TECHNOLOGY FOR NEXT-GENERATION WIRELESS SYSTEM APPLICATIONS/

Authors
Citation
Le. Larson, HIGH-SPEED SI SIGE TECHNOLOGY FOR NEXT-GENERATION WIRELESS SYSTEM APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1541-1548
Citations number
36
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1541 - 1548
Database
ISI
SICI code
1071-1023(1998)16:3<1541:HSSTFN>2.0.ZU;2-0
Abstract
Si/SiGe integrated circuit technology represents a revolutionary oppor tunity to combine high-performance digital, analog, and rf circuits on a common substrate. The outstanding high-frequency performance of the Si/SiGe devices, combined with the high levels of integration of comp lementary metal-oxide-semiconductors will contribute to a long-term '' paradigm shift'' in the architectural partitioning of high-frequency h igh-performance wireless systems. This article outlines the key future systems applications for the technology. (C) 1998 American Vacuum Soc iety.