X-RAY-ABSORPTION AT GE L-3 EDGES AS A TOOL TO INVESTIGATE GE SI(001) INTERFACES AND HETEROSTRUCTURES/

Authors
CASTRUCCI P GUNNELLA R DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation
P. Castrucci et al., X-RAY-ABSORPTION AT GE L-3 EDGES AS A TOOL TO INVESTIGATE GE SI(001) INTERFACES AND HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1616-1620
Citations number
18
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1616 - 1620
Database
ISI
SICI code
1071-1023(1998)16:3<1616:XAGLEA>2.0.ZU;2-6
Abstract
The Ge L-3 edge x-ray absorption spectra of a series of Ge/Si heterost ructures grown on Si(001) substrates were investigated using linearly polarized synchrotron radiation. By making use of a multiple scatterin g approach we reproduced the experimental spectra for different struct ural models and several degrees of strain and intermixing. Evidences o f interfacial intermixing processes were found even at room temperatur e. Such an intermixing is strongly inhibited by Sb assisted growth. (C ) 1998 American Vacuum Society.