ACETYLENE GAS AS A CARBON SOURCE - AN X-RAY PHOTOEMISSION SPECTROSCOPY AND NEAR-EDGE X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY STUDY OF ITS STABILITY ON SI(111)-7X7

Authors
ROCHET F DUFOUR G STEDILE FC SIROTTI F PRIETO P DECRESCENZI M
Citation
F. Rochet et al., ACETYLENE GAS AS A CARBON SOURCE - AN X-RAY PHOTOEMISSION SPECTROSCOPY AND NEAR-EDGE X-RAY-ABSORPTION FINE-STRUCTURE SPECTROSCOPY STUDY OF ITS STABILITY ON SI(111)-7X7, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1692-1696
Citations number
16
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1692 - 1696
Database
ISI
SICI code
1071-1023(1998)16:3<1692:AGAACS>2.0.ZU;2-F
Abstract
The electronic structure and bonding geometry of acetylene adsorbed at room temperature on Si(111)-7 x 7 is studied by a combination of sync hrotron radiation x-ray photoemission spectroscopy and of near-edge x- ray absorption fine structure spectroscopy. Then the stability of the molecule, submitted to thermal annealings and to synchrotron white bea m irradiation is examined. The possibility of using acetylene gas as a carbon source for the fabrication of silicon-carbon compounds (or for the formation of abrupt carbon/silicon interfaces) is discussed. (C) 1998 American Vacuum Society.