EFFECT OF HYDROGENATION ON MISFIT DISLOCATIONS IN SIGE SI STRUCTURES FOR PHOTOVOLTAIC APPLICATIONS/

Authors
DAAMI A BREMOND G CAYMAX M POORTMANS J
Citation
A. Daami et al., EFFECT OF HYDROGENATION ON MISFIT DISLOCATIONS IN SIGE SI STRUCTURES FOR PHOTOVOLTAIC APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1737-1739
Citations number
14
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
3
Year of publication
1998
Pages
1737 - 1739
Database
ISI
SICI code
1071-1023(1998)16:3<1737:EOHOMD>2.0.ZU;2-M
Abstract
Thick Si0.9Ge0.1 relaxed layers grown by chemical vapor deposition on Si(100) oriented substrates are investigated by photoluminescence (PL) spectroscopy. Resolved excitor;ic near-band-gap luminescence is obser ved in as-grown and hydrogen treated samples. Phonon assisted transiti ons are also well identified. The effect of hydrogenation is to enhanc e the luminescence related to the near-band gap. This enhancement is c orrelated with a quenching in the dislocation related PL especially fo r the D3-D4 bands and the T band. This indicates that hydrogenation pa ssivates radiative centers inside dislocation cores which are, respons ible, beside nonradiative channels, for the quenching of SiGe band-gap edge luminescence. (C) 1998 American Vacuum Society.