ANALYSIS OF THE VARIATION IN THE COMPOSITION AS A FUNCTION OF GROWTH-PARAMETERS IN THE MBE GROWTH OF INDIUM-DOPED HG1-XCDXTE

Authors
VYDYANATH HR AQARIDEN F WIJEWARNASURIYA PS SIVANATHAN S CHAMBERS G BECKER L
Citation
Hr. Vydyanath et al., ANALYSIS OF THE VARIATION IN THE COMPOSITION AS A FUNCTION OF GROWTH-PARAMETERS IN THE MBE GROWTH OF INDIUM-DOPED HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 504-506
Citations number
2
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
6
Year of publication
1998
Pages
504 - 506
Database
ISI
SICI code
0361-5235(1998)27:6<504:AOTVIT>2.0.ZU;2-P
Abstract
Compositional changes induced in growing Hg(1-x)Cg(x)Te layers as a fu nction of the changes in temperature of the indium source in the MBE c hamber have been analyzed in terms of the Hg-In alloy thermodynamics a nd changes In the activity of indium over the growing films as the Hg flux changes. Compositional changes induced by changes in the Te sourc e temperature have been analyzed in terms of the changes in the activi ty of Cd over the growing layers. These analysis are helpful in unders tanding the compositional changes with variation of the growth paramet ers in the MBE chamber.