OBSERVATION OF PREVALENCE OF QUASI-EQUILIBRIUM IN THE MBE GROWTH OF HG1-XCDXTE

Authors
VYDYANATH HR AQARIDEN F WIJEWARNASURIYA PS SIVANANTHAN S NATHAN V
Citation
Hr. Vydyanath et al., OBSERVATION OF PREVALENCE OF QUASI-EQUILIBRIUM IN THE MBE GROWTH OF HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 507-509
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
6
Year of publication
1998
Pages
507 - 509
Database
ISI
SICI code
0361-5235(1998)27:6<507:OOPOQI>2.0.ZU;2-L
Abstract
MBE growth of Hg1-xCdxTe has been carried out at 185 degrees C. Parame ters of growth have systematically varied. The resulting compositional changes and the electrical characteristics have been explained on the basis of the prevalence of quasi-equilibrium at the growth. temperatu re.