MERCURY INTERSTITIAL GENERATION IN ION-IMPLANTED MERCURY CADMIUM TELLURIDE

Junction formation and stability in ion implanted mercury cadmium tell uride critically depend on the ability to generate Hg interstitials. T he creation of Hg interstitials is found to strongly depend on the pre ferred lattice position of the element implanted. Elements that substi tute onto the cation sublattice create significantly more Hg interstit ials than elements that sit interstitially or on the anion sublattice. Recoils from implant damage also contribute to Hg interstitial format ion in heavier mass implants (Z greater than or equal to of mass Zn), but appear to have negligible influence on interstitial generation in implants of lighter ions. The combination of implanting ions of large mass and high solubility on the cation sublattice produces strong Hg i nterstitial sources. Implants with these ions can form deep junctions even in heavily doped substrates. Junction stability is also improved with the stronger interstitial source.