Ia. Denisov et al., PHYSICOCHEMICAL PROPERTIES OF GA AND IN DOPANTS DURING LIQUID-PHASE EPITAXY OF CDXHG1-XTE, Journal of electronic materials, 27(6), 1998, pp. 648-650
This work deals with the study by means of radioactive tracers autorad
iography, as well as measuring of galvanomagnetic properties, of Ga an
d In doping of epitaxial CdxHg1-xTe layers during their crystallizatio
n from a Te-rich melt. Ga and In were introduced in the form of Ga-72
and In-114 master alloys with Te. The effective distribution coefficie
nts of Ga and In during the crystallization of the CdxHg1-xTe solid so
lutions with x = 0.20 to 0.23 were determined by cooling the Te-base m
elt to 515-470 degrees C. Depending on the concentration of the dopant
s and the time-temperature conditions of CdxHg1-xTe growth, these rati
os for Ga and In were 1.5-2.0 and 1.0-1.5, respectively. The electrica
l activity of Ga and In was determined after annealing of the CdxHg1-x
Te layers in saturated Hg vapor at 270-300 degrees C. In doping of the
epitaxial layers to (3-8) x 10(14) cm(-3) with subsequent annealing i
n saturated Hg vapor at similar to 270 degrees C increases the carrier
Lifetime approximately by a factor of two as compared with the undope
d material annealed under the same conditions.