PHYSICOCHEMICAL PROPERTIES OF GA AND IN DOPANTS DURING LIQUID-PHASE EPITAXY OF CDXHG1-XTE

Citation
Ia. Denisov et al., PHYSICOCHEMICAL PROPERTIES OF GA AND IN DOPANTS DURING LIQUID-PHASE EPITAXY OF CDXHG1-XTE, Journal of electronic materials, 27(6), 1998, pp. 648-650
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
27
Issue
6
Year of publication
1998
Pages
648 - 650
Database
ISI
SICI code
0361-5235(1998)27:6<648:PPOGAI>2.0.ZU;2-7
Abstract
This work deals with the study by means of radioactive tracers autorad iography, as well as measuring of galvanomagnetic properties, of Ga an d In doping of epitaxial CdxHg1-xTe layers during their crystallizatio n from a Te-rich melt. Ga and In were introduced in the form of Ga-72 and In-114 master alloys with Te. The effective distribution coefficie nts of Ga and In during the crystallization of the CdxHg1-xTe solid so lutions with x = 0.20 to 0.23 were determined by cooling the Te-base m elt to 515-470 degrees C. Depending on the concentration of the dopant s and the time-temperature conditions of CdxHg1-xTe growth, these rati os for Ga and In were 1.5-2.0 and 1.0-1.5, respectively. The electrica l activity of Ga and In was determined after annealing of the CdxHg1-x Te layers in saturated Hg vapor at 270-300 degrees C. In doping of the epitaxial layers to (3-8) x 10(14) cm(-3) with subsequent annealing i n saturated Hg vapor at similar to 270 degrees C increases the carrier Lifetime approximately by a factor of two as compared with the undope d material annealed under the same conditions.