Ms. Han et al., INTERDIFFUSION BEHAVIOR OF HG IN HGTE CDTE SUPERLATTICES GROWN ON CD0.96ZN0.04TE (211)B SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of electronic materials, 27(6), 1998, pp. 680-683
Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spect
roscopy (SIMS) measurements have been performed to investigate the eff
ect of rapid thermal annealing on the interdiffusion behavior of Hg in
HgTe/CdTe superlattices grown on Cd0.96Zn0.04Te (211)B substrates by
molecular beam epitaxy. The sharp satellite peaks of the DCRC measurem
ents an a 100-period HgTe/CdTe (100 Angstrom/100 Angstrom) superlattic
e show a periodic arrangement of the superlattice with high-quality in
terfaces. The negative direction of the entropy change obtained from t
he diffusion coefficients as a function of the reciprocal of the tempe
rature after RTA indicates that the Kg diffusion for the annealed HgTe
/CdTe superlattice is caused by an interstitial mechanism. The Cd and
the Hg concentration profiles near the annealed HgTe/CdTe superlattice
interfaces, as measured by SIMS, show a nonlinear behavior for Hg, or
iginating from the interstitial diffusion mechanism of the Hg composit
ion. These results indicate that a nonlinear interdiffusion behavior i
s dominant for HgTe/CdTe superlattices annealed at 19 degrees C and th
at the rectangular shape of HgTe/CdTe superlattices may change to a pa
rabolic shape because of the intermixing of Hg and Cd due to the therm
al treatment.