HOT PHONON EFFECTS IN ZNSE

Authors
MEHENDALE M SIVANANTHAN S POTZ W SCHROEDER WA
Citation
M. Mehendale et al., HOT PHONON EFFECTS IN ZNSE, Journal of electronic materials, 27(6), 1998, pp. 752-755
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
6
Year of publication
1998
Pages
752 - 755
Database
ISI
SICI code
0361-5235(1998)27:6<752:>2.0.ZU;2-N
Abstract
Femtosecond pump-probe differential reflectivity spectroscopy is used to investigate the ultrafast cooling dynamics of hot photoexcited carr iers in a high-quality ZnSe epilayer grown on GaAs. Comparison with a theoretical model based on a balance equation approach indicates that the observed reduction in the electron cooling rate with increasing ca rrier density (for carrier densities greater than similar to 3 x 10(17 )cm(-3)) is due to both screening of the Frohlich interaction and a no n-equilibrium hot longitudinal optic-phonon population generated by th e cooling electron distribution.