THE KINETICS OF THE GROWTH OF NITROGEN-DOPED ZNSE GROWN BY PHOTO-ASSISTED MOVPE

Detailed growth kinetic studies of the photo-assisted growth of ZnSe f rom the precursors dimethylzinc triethylamine adduct (DMZn.TEN) with e ither dimethylselenium (DMSe) or diethylselenium (DESe) have shown tha t there are two regimes of growth temperature, low temperature growth dominated by site blocking from unreacted precursors and a high temper ature regime dominated by precursor desorption. The proposed growth me chanism is based on a surface bimolecular reaction mediated by hydroge n radicals which is initiated by the decomposition of surface DMZn. Th e same mechanism has been used to explain the residual hydrogen concen tration in the DMSe grown layers of 1 x 10(17) cm(-3) and the enhancem ent in hydrogen incorporation that occurs with DESe by deviating from 1:1 precursor ratio. Nitrogen doping using trimethylsilylazide (TMSiN3 ) in combination with DESe has achieved nitrogen incorporation up to 1 x 10(20) cm(-3) but the incorporation of hydrogen is also observed to increase and the growth rate decrease. This has been explained using a Langmuir Hinshelwood model causing a disruption of the surface bimol ecular reaction and bonding hydrogen radicals to surface nitrogen.