PREPARATION OF ZNSE LIGHT-EMITTING-DIODES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TRISDIMETHYLAMINOARSINE AS A P-TYPE DOPING SOURCE

Trisdimethylaminoarsine was used in atmospheric-pressure metalorganic chemical vapor deposition growth of ZnSe on GaAs. The metalorganic pre cursors employed for ZnSe growth were diethylzinc and diethylselenide, and ethyliodide was used as the n-type dopant. P-on-n light emitting diode (LED) structures were prepared, and molecular beam epitaxially d eposited HgTe layers were used as ohmic contacts to the p-type ZnSe. B lue LEDs were fabricated on p-on-n samples. Preliminary LED data and t he material characterization data are presented.