ZNSE ZNSXSE1-X HETEROJUNCTION VALENCE-BAND DISCONTINUITY MEASURED BY X-RAY PHOTOELECTRON-SPECTROSCOPY/

Authors
SPORKEN R ABUELRUB KM CHEN YP SIVANANTHAN S
Citation
R. Sporken et al., ZNSE ZNSXSE1-X HETEROJUNCTION VALENCE-BAND DISCONTINUITY MEASURED BY X-RAY PHOTOELECTRON-SPECTROSCOPY/, Journal of electronic materials, 27(6), 1998, pp. 776-781
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
6
Year of publication
1998
Pages
776 - 781
Database
ISI
SICI code
0361-5235(1998)27:6<776:ZZHVDM>2.0.ZU;2-H
Abstract
X-ray photoelectron spectroscopy was used to measure the valence band discontinuity at the ZnSe/ZnSxSe1-x interface as a function of alloy c omposition. Due to the large lattice mismatch, the experimental values have to be corrected in order to account for strain in the ZnSe layer s. We find the valence band discontinuity to vary between 0 and 0.76 e V as a function of S content x. This result is in excellent agreement with theoretical calculations. It also shows that the conduction band discontinuity is not negligibly small.