THE GROWTH OF ALINSB BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

We have grown AlxIn1-xSb epitaxial layers by metalorganic chemical vap or deposition using tritertiarybutylaluminum (TTBAl), trimethylindium (TMIn), and triethylantimony (TESb) as sources in a high speed rotatin g disk reactor. Growth temperatures of 435 to 505 degrees C at 200 Tor r were investigated. The V/III ratio was varied from 1.6 to 7.2 and TT BAl/(TTBAl+TMIn) ratios of 0.26 to 0.82 were investigated. AlxIn1-xSb compositions from x = 0.002 to 0.52 were grown with TTBAl/(TTBAl+TMIn) ratios of 0.62 to 0.82. Under these conditions, no Al was incorporate d for TTBA1/(TTBAl+TMIn) ratios less than 0.62. Hall measurements of A lxIn1-xSb showed hole concentrations between 5 x 10(16) cm(3) to 2 x 1 0(17) cm(-3) and mobilities of 24 to 91 cm(2)/Vs for not intentionally doped AlxIn1-xSb.