A DC MODEL FOR ASYMMETRIC TRAPEZOIDAL GATE MOSFET IN STRONG INVERSION

Asymmetric trapezoidal gate (ATG) MOSFET is an innovative device havin g a structure of a relatively narrow drain-side width in order to redu ce parasitic effects for enhancing device performance, In this paper, we develop a DC model for ATG MOSFET's. We use a charge-based approach to explore the asymmetric feature between source and drain of ATG MOS FET's, and obtain analytic formulae for threshold voltage, body effect , drain current, and channel length modulation effect in linear and sa turation regions for both forward and reverse modes of operations, The model provides a physical analysis of the ATG structure, shows good a greement with measurement data, and is useful in circuit simulation wi th ATG devices.