COMPUTATIONALLY EFFICIENT MODELS FOR QUANTIZATION EFFECTS IN MOS ELECTRON AND HOLE ACCUMULATION LAYERS

In this paper, models appropriate for device simulators are developed which account for the quantum mechanical nature of accumulated regions . Accumulation layer quantization is important in deep submicron (less than or equal to 0.25 mu m) MOS devices in the overlapped source/drai n extension regions, in accumulation mode SOI devices, and in buried-c hannel PMOS structures, Computationally efficient models suitable for routine device simulation are presented that predict the reduction of the accumulated net electron (hole) sheet charge when quantization of the electron (hole) accumulation region is accounted for, The results of comparisons with self-consistent simulations support the validity o f these models. In addition, simulation results will be shown which il lustrate that when inversion layer quantum mechanical effects are mode led, it is also necessary to account for accumulation layer quantum me chanical effects in order to obtain more physically accurate as well a s numerically stable solutions.