MODELING AND SIMULATION OF STRESS-INDUCED LEAKAGE CURRENT IN ULTRATHIN SIO2-FILMS

Authors
RICCO B GOZZI G LANZONI M
Citation
B. Ricco et al., MODELING AND SIMULATION OF STRESS-INDUCED LEAKAGE CURRENT IN ULTRATHIN SIO2-FILMS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1554-1560
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
7
Year of publication
1998
Pages
1554 - 1560
Database
ISI
SICI code
0018-9383(1998)45:7<1554:MASOSL>2.0.ZU;2-U
Abstract
This paper presents a new model for stress-induced leakage current (SI LC) in ultrathin SiO2 films, that is able to explain and accurately re present the experimental data obtained with MOS capacitors fabricated with different technologies and oxide thickness in the 3-7 nm range.