MOMBE AND CHARACTERIZATION OF INAS AND (AL,GA)SB

In this paper we will report on the growth of InAs, (Al,Ga)Sb and thei r heterostructures with MOMBE using TMIn, TEGa, precracked AsH3 and el emental Sb-4. For the first time we also present dimethylethylamineala ne (DMEAAl) as Al-precursor in MOMBE for the deposition of Al-containi ng antimonides. The growth temperature as well as the V/III-ratio were varied and optimized. Homoepitaxial InAs and GaSb bulk layers were ob tained with state-of-the-art morphological, structural and optical pro perties. Successful growth of Al-containing materials is demonstrated by the extraordinary optical characteristics of an Al0.26Ga0.74Sb-laye r: photoluminescence (PL) spectra recorded at 2 K exhibit a sharp exci tonic PL-transition with a full-width at half-maximum (FWHM) of only 6 .3 meV. A tenfold AlSb/GaSb multi quantum well (MQW) structure was inv estigated using XRD. There is a good agreement between the simulated a nd the measured X-ray diffractogram. With this new source, high-qualit y heterostructures containing Al and abrupt interfaces are achieved. ( C) 1998 Elsevier Science B.V. All rights reserved.