DOPING OF INSB AND INAS USING CBR4 DURING GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

For InSb, hole concentrations up to mid-10(20) cm(-3) were obtained at growth temperatures up to 450 degrees C. This is believed to be the h ighest hole concentration yet reported for p-InSb. The hole concentrat ion was found to be dependent on dopant flux and V/III ratio but not o n growth temperature. Attempts to increase the hole concentration beyo nd this level resulted in severe degradation of the surface morphology . For InAs, all growth conditions used with elemental In produced comp ensated n-type material. High CBr4 fluxes also led to severe parasitic etching. By contrast, the use of metalorganic In precursors such as t riethylindium (TEI) appear to enhance the ability of carbon to incorpo rate on the group V rather than the group III sublattice, making the a ttainment of highly compensated p-type material possible, but only in a narrow range of growth conditions. (C) 1998 Elsevier Science B.V. Al l rights reserved.