NITRIDATION OF INXGA1-XAS BY DIMETHYL-HYDRAZINE (DMHY)

Conversion from InxGa1-xAs to InxGa1-xN by nitridation using dimethyl- hydrazine (DMHy) has been investigated as a new device integration tec hnique for the future III-V nitride electronic and optoelectronic inte grated devices. As a result of In evaporation from the surface of InxG a1-xAs layer due to the decomposition of the InN during nitridation, a thin GaN layer is formed at the surface of InxGa1-xAs by the nitridat ion. However, a new peak corresponding with InxGa1-xN(1 1 1) in the X- ray diffraction pattern has been observed after nitridation for an enc apsulated InxGa1-xAs layer with a thin GaAs layer to suppress of the e vaporation of the In atoms. The results strongly indicate that, in pri nciple, the conversion from the conventional III-V compounds, includin g not only binary but also ternary compositions such as InxGa1-xAs, to their derived III-V nitride compounds may be possible by improving th e nitridation conditions. (C) 1998 Elsevier Science B.V. All rights re served.