MAPPING OF BRAGG-SURFACE DIFFRACTION OF INP GAAS(100) STRUCTURE/

InP/GaAs(1 0 0) heterostructures grown by gas-source molecular-beam ep itaxy were analyzed using three-beam bragg-surface diffraction (BSD) o f the X-ray multiple diffraction (MD) phenomenon. The angular MD condi tion is scanned by varying both, the omega incidence angle and the phi rotation angle around [1 0 0] in order to provide the mapping of this condition. From the two-dimensional mapping -omega:phi scan, the crys talline perfection (mosaic spread) parallel (eta(phi)) and perpendicul ar (eta(omega)) to the growth direction can be investigated along the layer surface and the substrate interface. The omega:phi scan of the 0 0 0, 2 0 0, 1 (1) over bar 1 1 BSD is used to analyze the growth proc essing and post-growth annealing of InP/GaAs samples. The effect of va rious defect-reduction tools on layer and substrate crystal quality is also investigated. (C) 1998 Elsevier Science B.V. All rights reserved .