CHEMICAL BEAM EPITAXY OF INTEGRATED 1.55 MU-M LASERS ON EXACT AND MISORIENTED (100)-INP SUBSTRATES

Chemical beam epitaxy (CBE) on patterned substrates is a key technolog y for integrated optoelectronics. Therefore, it is important to unders tand the growth kinetics during selective growth. High surface step de nsities enhance the incorporation of Ga and P. The GaInAsP composition is independent of the width of the grooves for growth on exactly orie nted substrates, but not for growth on misoriented substrates. There i s a reconstruction of the (1 0 0) surface in narrow grooves when the w idth of the groove is comparable to the migration length of adsorbed m etalorganic molecules. The laser performance obtained (J(th infinity) = 420 A cm(-2)) is equal to that on epi-ready substrates. A 3 mu m wid e and 220 mu m long integrated device shows a threshold current of 9.5 mA. The device characteristics measured in this work are among the be st realised with either CBE or MOVPE. (C) 1998 Elsevier Science B.V. A ll rights reserved.