MOMBE GROWN GAINASP (LAMBDA(G)=1.05 1.15 MU-M) WAVE-GUIDE FOR LASER INTEGRATED PHOTONIC ICS/

The fabrication of advanced undoped and semi-insulating optical wavegu ides to be implemented in integrated photonic ICs on InP is demonstrat ed on the basis of the metal organic molecular beam epitaxy growth tec hnique. The optimised deposition of waveguide layer structures of high crystalline and optical quality resulted in optical losses as low as 0.7/0.9 dB/cm (TE/TM polarisation) at lambda = 1.55 mu m. Implementati on of a thin InP marker between the slab and the rib served to control rib formation during dry etching. Doping with iron using an elemental source was applied for semi-insulating behaviour of the waveguide dev ices. Selective area deposition of the waveguide layer structure at a growth temperature of 485 degrees C around a masked laser layer stack to enable laser/waveguide butt coupling has been developed to meet the requirements imposed by photonic ICs. (C) 1998 Elsevier Science B.V. All rights reserved.