MULTIPLE-QUANTUM-WELL COMPRESSIVE-STRAINED HETEROSTRUCTURES FOR LOW DRIVING POWER ALL-OPTICAL WAVE-GUIDE SWITCHES

In this work we compare the InGaAs/InAlAs and InGaAs/InP multi-quantum well (MQW) systems for the realization of ultra-fast all-optical wave guide switches. We will discuss the influence of the growth parameters on the reduction of non-radiative carrier lifetimes from the nanoseco nd down to few tens of the picoseconds timescale, while maintaining sh arp excitonic features. The description of the crystallographic and op tical properties of the grown materials will also be presented. An opt ically controlled device working with pumping energies down to 75 fJ a nd pump-on-pump-off contrasts in excess of 17 dB will be shown. (C) 19 98 Elsevier Science B.V. All rights reserved.