ROOM-TEMPERATURE OPERATION OF GAXIN1-XP GA0.47IN0.53AS RESONANT-TUNNELING DIODES/

Authors
COHEN GM RITTER D
Citation
Gm. Cohen et D. Ritter, ROOM-TEMPERATURE OPERATION OF GAXIN1-XP GA0.47IN0.53AS RESONANT-TUNNELING DIODES/, Journal of crystal growth, 188(1-4), 1998, pp. 359-362
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
188
Issue
1-4
Year of publication
1998
Pages
359 - 362
Database
ISI
SICI code
0022-0248(1998)188:1-4<359:ROOGGR>2.0.ZU;2-I
Abstract
Room temperature operation of GaInP/GaInAs/InP resonant tunneling diod es on InP substrates was demonstrated. The diodes exhibited high peak current densities and useful peak-to-valley current ratios. Their perf ormance was comparable to that of similar GaInAs/AlInAs devices. The t hickness and composition of the GaInP barriers was obtained from high- resolution X-ray diffraction measurements. (C) 1998 Elsevier Science B .V. All rights reserved.