Citation
Mc. Chen et al., SELF-ORGANIZED INAS GAAS QUANTUM DOTS GROWN ON (100) MISORIENTED SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 188(1-4), 1998, pp. 383-386
Citations number
6
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
188
Issue
1-4
Year of publication
1998
Pages
383 - 386
Database
ISI
SICI code
0022-0248(1998)188:1-4<383:SIGQDG>2.0.ZU;2-9
Abstract
In this study, self-organized InAs quantum dots (QDs) were grown on (1
0 0) GaAs substrates with a 7 degrees off-cut towards the (1 1 0) pla
ne by using molecular beam epitaxy. QD with 2 ML nominal thickness gro
wn on the vicinal substrate shows a 8.5 K photoluminescence line width
of 27 meV and a dot density of 3 x 10(11)/cm(2). (C) 1998 Elsevier Sc
ience B.V. All rights reserved.