DIELECTRIC-RELAXATION OF AMORPHOUS AND TEXTURED MIS-CAPACITOR THIN-FILMS

We report a study of the dynamic response of MIS capacitors, using die lectric spectroscopy (DS) technique. Amorphous silicon oxynitride and textured cerium dioxide have been used as an insulator film. Silicon o xynitride thin films were obtained by remote-PECVD (plasma enhanced ch emical vapor deposition) and textured cerium dioxide thin films by r.f . sputtering. A common thermal-activated loss peak moving from low to high frequencies, observed near 10(5) Hz at temperatures higher than r oom temperature, is associated with the insulator/semiconductor interf ace. Amorphous silicon does not exhibit any other peak, whereas for ce rium oxide other peaks located at lower frequencies are observed at te mperatures higher than room temperature. The dielectric measurements w ere performed from -100 to 160 degrees C and between 20 Hz and 1 MHz. (C) 1998 Elsevier Science Ltd. All rights reserved.