DOPING OF POLYCRYSTALLINE SILICON FILMS USING AN ARSENIC SPIN-ON-GLASS SOURCE AND SURFACE SMOOTHNESS

In this brief, the doping of polycrystalline silicon from a commercial ly available arsenic spin-on glass (SOG) source is described for the f irst time. It is shown that the arsenic SOG source provides low sheet resistivities in thin polycrystalline silicon films which can be used as gates and contacts. In addition, the polycrystalline silicon films doped with arsenic SOG and exposed to an oxidation step exhibit reduce d top surface roughness when compared to films doped with phosphorus f rom a POCl3 source. The minimization of the top surface roughness of t he polyoxide is important for its use as a gate insulator in advanced three-dimensional complementary metal-oxide-semiconductor (CMOS) and a s a sidewall contact in BiCMOS bipolar junction transistor devices.