A CONSIDERATION FOR ELECTRICAL ACTIVATION OF CARBON-IMPLANTED INTO GALLIUM-ARSENIDE

Authors
YOKOTA K EMI N SAKAGUCHI M SUNAIRI S WATANABE M TAKAGI T HIRAI K TAKANO H KUMAGAI M
Citation
K. Yokota et al., A CONSIDERATION FOR ELECTRICAL ACTIVATION OF CARBON-IMPLANTED INTO GALLIUM-ARSENIDE, Materials chemistry and physics, 54(1-3), 1998, pp. 84-87
Citations number
12
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
54
Issue
1-3
Year of publication
1998
Pages
84 - 87
Database
ISI
SICI code
0254-0584(1998)54:1-3<84:ACFEAO>2.0.ZU;2-F
Abstract
C+-implanted GaAs that the surfaces were encapsulated with 2 x 10(20) cm(-3) As-doped a-Si:H films were annealed at temperatures of 850-1000 degrees C. Carriers were generated only in a shallower region than th e projected range of the C+ ions, The sheet carrier concentrations inc reased slightly with the implanted dose. The activation of implanted C atoms in GaAs encapsulated with As-doped a-Si:H films was improved in comparison with Si or GaAs wafer proximity annealed GaAs and SiO2 enc apsulation-annealed GaAs. (C) 1998 Elsevier Science S.A. All rights re served.