TITANIUM IMPLANTATION PROFILES IN SILICON USING METAL PLASMA-BASED ION-IMPLANTATION TECHNIQUE

We have carried out preliminary studies of a plasma-based ion implanta tion technique which utilizes a vacuum are produced metal plasma. Dept h profiles of titanium implanted into silicon have been analysed by XP S and RES. Titanium concentration in the silicon substrate increased p roportionally to the repetition frequency. As the applied pulse voltag e increased, the depth of titanium implantation increased. The titaniu m was found to a depth of up to 1.0x10(18) atoms cm(-2) in the silicon substrate, and the dose was estimated to be about 10(16)similar to 10 (17) cm(-2). A mixed layer of titanium and silicon was produced. RES a nalysis indicated a possibility for titanium and silicon in the mixed layer to form a silicide structure upon heating of the substrate. (C) 1998 Elsevier Science S.A. All rights reserved.